Evidence for bistable defects in 6H-SiC

Structures of 6H-SiC Surfaces

We have systematically studied reconstructions of the 6H SiC(0001) and (0007) surface under both Si rich and C rich condition using field ion-scanning tunneling microscopy (FI-STM). The sample was cleaned by in situ Si beam etching at 900-1000 'C. The Si rich and C rich phases were produced by annealing the sample in a Si flm and C2HZ, respectively. On the (0001) surface, the as-cleaned surface...

Self-organization in porous 6H–SiC

Self-organization in porous 6H–SiC" (2000). Faculty Publications from the Department of Electrical and Computer Engineering. 7.

Shockley-Frank stacking faults in 6H-SiC

EFFECT OF CRYSTAL DEFECTS ON MINORITY CARRIER DIFFUSION LENGTHS IN 6H Sic

Minority-carrier diffusion lengths in n-type 6H-SIC were measured using the planar electron-beam induced current (EBIC) technique. Experimental values of electron beam current, EBIC, and beam voltage were obtained for n-type SIC with a carrier concentration of 1.7E17 ~ m ~ . This data was fit to theoretically calculated diode efficiency curves, and the diffusion length and metal layer thickness...

Hexagonal boron nitride and 6H-SiC heterostructures